EDN

Matching ESD protection to process geometry

Advanced CMOS process technologies enable IC designers to deliver higher performing devices, but also increase the need for extra board-level ESD protection to ensure the reliability of the end ...
Nanowerk

World's first vertically stacked gate-all-around Si nanowire CMOS transistors

(Nanowerk News) At this week’s IEEE IEDM conference, world-leading research and innovation hub for nano-electronics and digital technology, imec, reported for the first time the CMOS integration of ...
Electronics Weekly

Input structure boosts analogue ESD protection

Toshiba has revealed details of an electrostatic discharge (ESD) protection scheme for 0.13μm analogue power semiconductors. “ESD protection is much more robust, up four times, and the standard ...
Design-Reuse

austriamicrosystems releases High-Voltage IO library offering 4KV ESD protection

austriamicrosystems ready to use ESD solution ensures ESD robustness of complex analog/mixed-signal designs in power management, automotive or medical applications UNTERPREMSTAETTEN, Austria -- Jul 10 ...
Design-Reuse

Sarnoff's 65nm CMOS TakeCharge ESD Solution licensed to Fujitsu, Japan

GISTEL, Belgium -- November 17, 2006 -- Sarnoff Europe (www.sarnoffeurope.com) today announced that it has licensed its on-chip electrostatic discharge (ESD) protection portfolio, TakeCharge® to ...
Electronics Weekly

Imec makes CMOS GAA nanowire mosfets

Imec has achieved the CMOS integration of vertically stacked gate-all-around (GAA) silicon nanowire MOSFETs. Key in the integration scheme is a dual-work-function metal gate enabling matched threshold ...