As the industry advances into the angstrom era, gate-all-around architectures combined with atomic-scale materials ...
The ever-shrinking features of transistors etched in silicon have always required pushing the cutting edge of manufacturing technology. The discovery of atomically thin materials like graphene and ...
WASHINGTON–Agere Systems Inc. today said its researchers have built the industry's smallest transistors using hafnium oxide instead of traditional silicon dioxide in the gate-insulator layer. The high ...
In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize ...
A field effect transistor (FET) is a carrier device with three terminals: source, drain, and gate. In FETs, an electric field can be applied at the terminal of the gate, modifying the conductive ...
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New nanoscale transistors use quantum tunneling to achieve high performance and efficiency
As computing demands grow, driven by artificial intelligence and the internet of things, the need for energy-efficient electronics becomes critical. At the heart of this evolution are transistors, the ...
A logic gate is an electronic component (or set of them) that performs a logic operation, in which the binary values 0 and 1 are represented with two different voltage values, as seen in the previous ...
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