Characterization of Monolithic InAlN/GaN NAND Logic Cell Supported by Circuit and Device Simulations
Abstract: In this brief, the monolithic integration of enhancement (E)-mode and depletion (D)-mode InAlN/GaN high-electron mobility transistors (HEMTs) is presented. The aim of this brief is to show ...
Abstract: A Final Test (FT) trimming circuit with 4x8 bit single-layer polysilicon EPROM and Pin multiplexing is presented in this paper. The main part of the proposed circuit consists of Pin ...
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